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| 2SC2545, 2SC2546, 2SC2547 Silicon NPN Epitaxial Application * Low frequency low noise amplifier * Complementary pair with 2SA1083, 2SA1084 and 2SA1085 Outline 2SC2545, 2SC2546, 2SC2547 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC2545 60 60 5 100 -100 400 150 -55 to +150 2SC2546 90 90 5 100 -100 400 150 -55 to +150 2SC2547 120 120 5 100 -100 400 150 -55 to +150 Unit V V V mA mA mW C C Electrical Characteristics (Ta = 25C) 2SC2545 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min V(BR)CBO 60 V(BR)CEO 60 V(BR)EBO ICBO IEBO 1 2SC2546 Max -- -- -- 0.1 0.1 Min 90 90 5 -- -- Typ Max -- -- -- -- -- -- -- 0.6 90 3.0 0.5 -- -- -- 0.1 0.1 1200 0.2 -- -- -- -- 2SC2547 Min 120 120 5 -- -- 250 -- -- -- -- -- Typ Max -- -- -- -- -- -- -- 0.6 90 3.0 0.5 -- -- -- 0.1 0.1 800 0.2 -- -- -- -- V V Unit Test conditions V V V A A IC = 10 A, I E = 0 IC = 1 mA, RBE = IE = 10 A, I C = 0 VCB = 50 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA Typ -- -- -- -- -- -- -- 0.6 90 3.0 0.5 5 -- -- 250 -- -- -- -- -- DC current transfer ratio hFE* Collector to emitter saturation voltage Base to emitter voltage 1200 250 0.2 -- -- -- -- -- -- -- -- -- VCE(sat) VBE Gain bandwidth product fT Collector output capacitance Noise voltage referred input Cob en MHz VCE = 12 V, IC = 2 mA pF nV/ Hz VCB = 10 V, IE = 0, f = 1 MHz VCE = 6V, IC = 10 mA, f = 1 kHz, Rg = 0, f = 1Hz Note: 1. The 2SC2545, 2SC2546 and 2SC2547 are grouped by hFE as follows. D E 400 to 800 400 to 800 F 600 to 1200 -- 250 to 500 250 to 500 2SC2545, 2SC2546 2SC2547 2 2SC2545, 2SC2546, 2SC2547 3 2SC2545, 2SC2546, 2SC2547 4 2SC2545, 2SC2546, 2SC2547 5 2SC2545, 2SC2546, 2SC2547 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 6 |
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